Home > Single Bipolar Transistors >

fast switching NPN transistor JSMSEMI BU406 JSM ideal for various electronic circuit power management

Product Categories

Bipolar Transistor Arrays [120]
Bridge Rectifiers [1296]
JFETs [73]
Single Bipolar Transistors [2284]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [536]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1334]
SCRs [158]
SCRs - Modules [48]
TRIACs [535]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

fast switching NPN transistor JSMSEMI BU406 JSM ideal for various electronic circuit power management

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 5uA

Pd - Power Dissipation : 60W

Transition frequency(fT) : 10MHz

type : NPN

Current - Collector(Ic) : 7A

Collector - Emitter Voltage VCEO : 200V

Description : Bipolar (BJT) Transistor NPN 200V 7A 10MHz 60W Through Hole TO-220-3

Mfr. Part # : BU406-JSM

Model Number : BU406-JSM

Package : TO-220-3

Contact Now

Product Overview

The BU406 is a high voltage, fast-switching NPN power transistor designed for general-purpose applications. It features low saturation voltage and Pb-free packaging options, making it suitable for various electronic circuits requiring efficient power handling and rapid switching capabilities.

Product Attributes

Brand: JSMICRO Semiconductor
Model: BU406
Package Type: TO-220-3L
Certifications: PbFree Packages Available

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	V(BR)CBO	IC=100uA, IE=0	400			V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=100mA,IB=0	200			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=100uA,IC=0			6	V
Collector Cut-off Current	ICES	VCB=400V,IE=0			5	mA
Collector Cut-off Current	ICES	VCB=250V,IE=0			1	mA
Collector Cut-off Current	ICBO	VCB=300V,IE=0			5	A
Emitter Cut-off Current	IEBO	VEB=6V,IC=0			1	mA
DC Current Gain	hFE	VCE=5V, IC=1A	50	100
Collector-Emitter Saturation Voltage	VCE(sat)	IC=5A,IB=500mA			1	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=5A,IB=500mA			1.2	V
Collector Output Capacitance	Cob	VCB=10V,IE=0, f=1MHz			80	pF
Transition Frequency	fT	VCE=5V,IC=0.2A,f=10MHz		10		MHz
Collector-Base Voltage	VCBO				400	V
Collector-Emitter Voltage	VCEO				200	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				7	A
Collector Power Dissipation	PC				60	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150

2409291234_JSMSEMI-BU406-JSM_C7498974.pdf

Buy cheap fast switching NPN transistor JSMSEMI BU406 JSM ideal for various electronic circuit power management product

fast switching NPN transistor JSMSEMI BU406 JSM ideal for various electronic circuit power management Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!