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NPN High Voltage Transistor DIODES FMMT458TA with 1A Peak Pulse Current and Matte Tin Plated Leads

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NPN High Voltage Transistor DIODES FMMT458TA with 1A Peak Pulse Current and Matte Tin Plated Leads

Emitter-Base Voltage(Vebo) : 7V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 500mW

Transition frequency(fT) : 50MHz

type : NPN

Current - Collector(Ic) : 225mA

Collector - Emitter Voltage VCEO : 400V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 400V 225mA 50MHz 0.5W Surface Mount SOT-23

Mfr. Part # : FMMT458TA

Model Number : FMMT458TA

Package : SOT-23

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Product Overview

The FMMT458 is a 400V NPN High Voltage Transistor in a SOT23 package. It offers a high continuous collector current of 225mA, a peak pulse current of 1A, and 500mW power dissipation. This transistor exhibits excellent hFE characteristics up to 100mA and is available as a complementary PNP type (FMMT558). It is designed to be totally lead-free, fully RoHS compliant, and halogen and antimony-free, making it a "Green" device. An automotive-compliant version (FMMT458Q) is also available under a separate datasheet.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOT23
  • Package Material: Molded Plastic, "Green" Molding Compound
  • UL Flammability Rating: 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
  • Weight: 0.008 grams (Approximate)
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • Automotive Compliant Part Available: FMMT458Q

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Collector-Base VoltageVCBO400V
Collector-Emitter VoltageVCEO400V
Emitter-Base VoltageVEBO7V
Continuous Collector CurrentIC225mA
Peak Pulse CurrentICM1A
Base CurrentIB200mA
Power DissipationPD500mW@TA = +25C (Note 5)
Thermal Resistance, Junction to AmbientRJA250C/W@TA = +25C (Note 5)
Thermal Resistance, Junction to LeadRJL197C/W(Note 6)
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C
Collector-Base Breakdown VoltageBVCBO400VIC = 100A
Collector-Emitter Breakdown VoltageBVCEO400VIC = 10mA (Note 8)
Emitter-Base Breakdown VoltageBVEBO7VIE = 100A
Collector Cutoff CurrentICBO100nAVCB = 320V
Emitter Cutoff CurrentIEBO100nAVEB = 5.6V
Collector Emitter Cutoff CurrentICES100nAVCE = 320V
Static Forward Current Transfer RatiohFE100IC = 1mA, VCE = 10V
150IC = 50mA, VCE = 10V
100IC = 100mA, VCE = 10V (Note 8)
Collector-Emitter Saturation VoltageVCE(sat)200mVIC = 20mA, IB = 2mA (Note 8)
500mVIC = 50mA, IB = 6mA (Note 8)
Base-Emitter Turn-On VoltageVBE(on)0.9VIC = 50mA, VCE = 10V (Note 8)
Base-Emitter Saturation VoltageVBE(sat)0.9VIC = 50mA, IB = 5mA (Note 8)
Output CapacitanceCobo5pFVCB = 20V, f = 1MHz
Transition FrequencyfT50MHzVCE = 20V, IC = 10mA, f = 20MHz
Turn-On Timeton135nsVCE = 100V, IC = 50mA, IB1 = 5mA, IB2 = -10mA
Turn-Off Timetoff2260nsVCE = 100V, IC = 50mA, IB1 = 5mA, IB2 = -10mA

2412251000_DIODES-FMMT458TA_C116737.pdf


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