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Sensitive Gate SCR KY BT169-23 Designed for AC Motor Speed Control and Power Regulation Applications

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Sensitive Gate SCR KY BT169-23 Designed for AC Motor Speed Control and Power Regulation Applications

Holding Current (Ih) : 4mA

Voltage - On State(Vtm) : 1.7V

Average Gate Power Dissipation (PG(AV)) : 100mW

Current - On State(It(RMS)) : 800mA

Peak off - state voltage(Vdrm) : 600V

Current - Surge(Itsm@f) : 10A

SCR Type : 1 SCR

Operating Temperature : -40℃~+110℃

Gate Trigger Voltage (Vgt) : 800mV

Description : SCR 600V 0.8A Surface Mount SOT-23

Mfr. Part # : BT169-23

Model Number : BT169-23

Package : SOT-23

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ShenZhenHanKingyuan Electronic BT169 Series 0.8A Sensitive Gate SCRs

The BT169 Series from ShenZhenHanKingyuan Electronic are sensitive gate SCRs designed for various applications. With an RMS on-state current of 0.8A and a peak repetitive off-state voltage of up to 600V, these SCRs are suitable for controlling AC power in devices such as washing machines, vacuum cleaners, massagers, and solid-state relays, as well as for AC motor speed regulation.

Product Attributes

Brand: ShenZhenHanKingyuan Electronic
Series: BT169 Series
Type: Sensitive Gate SCR
Origin: Shenzhen
Trademark: KY logo (registered)

Technical Specifications

Parameter	Conditions	BT169D	Unit
Repetitive Peak Off-State Voltage (VDRM, VRRM)		600	V
Average On-state Current (IT(AV))		0.6	A
R.M.S On-State Current (IT(RMS))		0.8	A
Surge On-State Current (ITSM)	F=50Hz, Tp=10ms	10	A
It for fusing	Tp=10ms	0.4	As
Average Gate Power Dissipation (PG(AV))	Tj=125C	0.1	W
Peak Gate Power Dissipation (PGM)	tp=20us, Tj=125C	0.5	W
Operating Junction Temperature (Tj)		-40~110	C
Storage Temperature (TSTG)		-40~150	C
Repetitive Peak Off-State Current (IDRM)	Tc=25C	5	uA
Repetitive Peak Off-State Current (IDRM)	Tc=110C	100	uA
Repetitive Peak Reverse Current (IRRM)	Tc=25C	5	uA
Repetitive Peak Reverse Current (IRRM)	Tc=110C	100	uA
Forward "on" voltage (VTM)	IT=1.2A, tp=380us	1.7	V
Gate non-trigger voltage (VGD)	VD=VDRM, Tj=110C,RGK=1k,RL=3.3K	0.1	V
Gate trigger voltage (VGT)	VD=12V ,IT=0.1A	0.8	V
Holding current (IH)	IT=50mA	4	mA
Latching current (IL)	IG=1.2 IGT	6	mA
Gate trigger current (IGT)	VD=12V ,IT=0.1A	200	uA
Critical-rate of rise of commutation voltage (dv/dt)	TJ=110C ,VD=2/3VDRM ,RGK=1K	10	V/us
Junction to Case Thermal Resistance (Rth(j-c))	TO-92/ SOT-23	75	/W
Junction to Case Thermal Resistance (Rth(j-c))	SOT-89	45	/W
Junction to Case Thermal Resistance (Rth(j-c))	SOT-223	31	/W

2409271703_KY-BT169-23_C2831919.pdf

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